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 RB160L-40
Diodes
Schottky barrier diode
RB160L-40
Applications General rectification External dimensions (Unit : mm) Land size figure (Unit : mm)
2.0
2.60.2
3
4
0.10.02 0.1
5.00.3
Features 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability.
2.0
4.50.2
1.20.3
PMDS
1.50.2 2.00.2
Structure
Construction Silicon epitaxial planar
ROHM : PMDS JEDEC : SOD-106 Manufacture Date
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.550.05 1.750.1 0.3
5.50.05
1.55 2.90.1 4.00.1 2.8MAX
Absolute maximum ratings (Ta=25C)
Param eter R evers e voltage (repetitive peak) R evers e voltage (DC) Average rectified forward current Forward current s urge peak (60Hz 1cyc) Junction tem perature S torage tem perature Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 40 1 70 150 -40 to +150 Unit V V A A
(* 1)Tc=90 m ax Mounted on epoxy board. 180 Half s ine wave
Electrical characteristics (Ta=25C)
Param eter Forward voltage R evers e current Sym bol VF IR 1 IR 2 Min. Typ. Max. 0.55 10 100 Unit V A A IF =1.0A VR =6V VR =40V Conditions
5.3 0.1 0.05 9.50.1
120.2
4.2
Rev.B
1/3
RB160L-40
Diodes
Electrical characteristic curves (Ta=25C)
1 100000 Ta=75 Ta=125 10000 Ta=150 1000 f=1MHz Ta=125
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=150 0.1 Ta=25 Ta=-25 0.01
1000 100 10 1 0.1 Ta=-25 Ta=75
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
Ta=25
10
0.001 0 200 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600
0.01 0 10 20 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 40
1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
510
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
500
Ta=25 IF=1A n=30pcs
490
480
470 AVE:489.6mV 460 VF DISPERSION MAP
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0
250 Ta=25 VR=40V n=30pcs 240 230 220 210 200 190 180 170 160 150 IR DISPERSION MAP Ct DISPERSION MAP AVE:192.7pF Ta=25 f=1MHz VR=0V n=10pcs
AVE:2.207uA
200
20
200 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 150 8.3ms 8.3ms 1cyc 100
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
150
Ifsm
1cyc 8.3ms
15
100
10
PEAK SURGE FORWARD CURRENT:IFSM(A)
50 AVE:125.6A 0 IFSM DISRESION MAP
5 AVE:8.667ns 0 trr DISPERSION MAP
50
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
300
1000
2
Mounted on epoxy board
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50 0 1
Ifsm t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Rth(j-a) 100
1.5
FORWARD POWER DISSIPATION:Pf(W)
D=1/2 Sin(180) 1 DC
10
IM=10mA
Rth(j-c)
IF=0.5A
1
1ms time 300us
0.5
10 TIME:t(ms) IFSM-t CHARACTERISTICS
100
0.1 0.01
0 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2
1 10 100 TIME:t(s) Rth-t CHARACTERISTICS
0.1
Rev.B
2/3
RB160L-40
Diodes
1
3 2.5 0A 0V DC D=1/2 T 1.5 1 0.5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) Sin(180) Io
3 2.5 0A 0V DC D=1/2 t T Io VR D=t/T VR=20V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
t
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.8
REVERSE POWER DISSIPATION:PR (W)
2
0.6 DC 0.4
D=1/2
VR D=t/T VR=20V Tj=150
2 1.5 1 0.5
0.2
Sin(180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Sin(180) 40 0 0 25 50 75 100 125 150 CASE TEMPARATURE:0T() Derating Curve(Io-Tc)
30
ELECTROSTATIC DISCHARGE TEST ESD(KV)
No break at 30kV 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
AVE:8.70kV
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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